| 发明名称 |
finFET TRANSISTOR AND CIRCUIT |
| 摘要 |
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.
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| 申请公布号 |
US2010203689(A1) |
申请公布日期 |
2010.08.12 |
| 申请号 |
US20100762427 |
申请日期 |
2010.04.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERNSTEIN KERRY;NOWAK EDWARD J.;RAINEY BETHANN |
| 分类号 |
H01L21/336;H01L27/08;H01L21/335;H01L21/8234;H01L27/088;H01L27/092;H01L29/04;H01L29/772;H01L29/786 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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