发明名称 Formation of a Zinc Passivation Layer on Titanium or Titanium Alloys Used in Semiconductor Processing
摘要 Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
申请公布号 US2010203731(A1) 申请公布日期 2010.08.12
申请号 US20090368110 申请日期 2009.02.09
申请人 KONG BOB;SUN ZHI-WEN;LANG CHI-I;TONG JINHONG;CHIANG TONY 发明人 KONG BOB;SUN ZHI-WEN;LANG CHI-I;TONG JINHONG;CHIANG TONY
分类号 H01L21/306;C09D1/00;H01L21/34 主分类号 H01L21/306
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