发明名称 |
Formation of a Zinc Passivation Layer on Titanium or Titanium Alloys Used in Semiconductor Processing |
摘要 |
Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
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申请公布号 |
US2010203731(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20090368110 |
申请日期 |
2009.02.09 |
申请人 |
KONG BOB;SUN ZHI-WEN;LANG CHI-I;TONG JINHONG;CHIANG TONY |
发明人 |
KONG BOB;SUN ZHI-WEN;LANG CHI-I;TONG JINHONG;CHIANG TONY |
分类号 |
H01L21/306;C09D1/00;H01L21/34 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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