发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE |
摘要 |
An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.
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申请公布号 |
US2010200851(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100695179 |
申请日期 |
2010.01.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OIKAWA YOSHIAKI;MARUYAMA HOTAKA;GODO HIROMICHI;KAWAE DAISUKE;YAMAZAKI SHUNPEI |
分类号 |
H01L29/786;H01L21/34;H01L21/44;H01L33/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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