发明名称 |
MEMS DEVICES HAVING SUPPORT STRUCTURES WITH SUBSTANTIALLY VERTICAL SIDEWALLS AND METHODS FOR FABRICATING THE SAME |
摘要 |
Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
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申请公布号 |
US2010202039(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100766702 |
申请日期 |
2010.04.23 |
申请人 |
QUALCOMM MEMS TECHNOLOGIES, INC. |
发明人 |
KOGUT LIOR;QIU CHENGBIN;WANG CHUN-MING;ZEE STEPHEN;ZHONG FAN |
分类号 |
G02B26/00;C23F1/02 |
主分类号 |
G02B26/00 |
代理机构 |
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代理人 |
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