发明名称 EXPOSURE MASK AND METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.
申请公布号 US2010203432(A1) 申请公布日期 2010.08.12
申请号 US20100700457 申请日期 2010.02.04
申请人 ITOH MASAMITSU 发明人 ITOH MASAMITSU
分类号 G03F1/22;G03F1/24;G03F1/84;G03F1/86;G03F7/22;H01L21/027 主分类号 G03F1/22
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