发明名称 |
METHODS OF FORMING DIODES |
摘要 |
Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed. |
申请公布号 |
WO2010062645(A3) |
申请公布日期 |
2010.08.12 |
申请号 |
WO2009US62358 |
申请日期 |
2009.10.28 |
申请人 |
MICRON TECHNOLOGY, INC.;SANDHU, GURTEJ, S.;SRINIVASAN, BHASKAR |
发明人 |
SANDHU, GURTEJ, S.;SRINIVASAN, BHASKAR |
分类号 |
H01L29/861 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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