发明名称 |
ELECTRICALLY PROGRAMMED MOS TRANSISTOR HAVING SOURCE/DRAIN SERIES RESISTANCE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device technology to attain a high-speed MOSFET. <P>SOLUTION: High-speed MOS transistors (32) are provided by forming a conductive layer (24) embedded in transistor gate sidewall spacers (27). The embedded conductive layer (24) is electrically insulated from the gate electrode (18) and the source/drain regions (28) of the transistor (32). The embedded conductive layer (24) is positioned over the source/drain extensions (30) and causes charge to accumulate in the source/drain extensions (30) lowering the series resistance of the source/drain regions (28). <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010177690(A) |
申请公布日期 |
2010.08.12 |
申请号 |
JP20100077347 |
申请日期 |
2010.03.30 |
申请人 |
ADVANCED MICRO DEVICES INC |
发明人 |
BULLER JAMES F;XIANG QI;WRISTERS DERICK J |
分类号 |
H01L21/8238;H01L29/78;H01L21/336;H01L27/092;H01L29/423;H01L29/49 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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