| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a long-life and highly reliable nitride semiconductor device having a substrate back electrode with excellent ohmic contact property, adhesiveness, and heat resistance, while having flatness on the backside of a nitride semiconductor substrate. <P>SOLUTION: The nitride semiconductor device includes the nitride semiconductor substrate having mutually opposed first and second surfaces, an element structure arranged on the first surface, and an electrode arranged on the second surface. A groove having irregularities on the bottom, and a flat part with a nitride polarity are arranged on the second surface. The electrode is disposed to cover the groove. <P>COPYRIGHT: (C)2010,JPO&INPIT |
