| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for optimizing an illumination source and mask features for microlithography. <P>SOLUTION: The illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum ILS (Image Log Slope) at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. The optimum mask may be used to create a CPL (Chromeless Phase Lithography) mask by assigning areas of minimum transmission in an optimum transmission mask to a -1, and areas of maximum transmission to a +1. <P>COPYRIGHT: (C)2010,JPO&INPIT |
