| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an integrated light power generation element for which the problem of performance decline to the exposure of a formed semiconductor layer in the air is solved, and also to provide a method for manufacturing the same. <P>SOLUTION: An integrated light power generation element I<SB>0</SB>is constituted by connecting a plurality of cells formed on a common substrate 10 in series, and each cell has: a substrate 10; a back surface electrode layer 11 divided and formed on the substrate 10; a semiconductor layer 12 formed on the back surface electrode layer 11 and divided from an adjacent cell with a division groove 15; a transparent electrode layer 13 formed on the semiconductor layer 12; and a short-circuit layer 14 which is formed in least at part of the semiconductor layer 12, in which metal having lower electric resistance than that of the semiconductor layer 12, and a glass frit are diffused, and which electrically short-circuits the back surface electrode layer 11 and transparent electrode layer 13. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
