BONDING METHOD OF SILICON BASE MEMBERS, DROPLET EJECTION HEAD, DROPLET EJECTION APPARATUS, AND ELECTRONIC DEVICE

摘要

A bonding method of silicon base members is provided. The bonding method of silicon base members comprises: applying an energy to a surface of a first silicon base member having Si—H bonds on the surface to selectively cut the Si—H bonds so that dangling bonds of the silicon (Si) is exposed on the surface of the first silicon base member; and bonding the surface of the first silicon base member, on which the dangling bonds of the silicon has been exposed, and a surface of a second silicon base member on which dangling bonds of silicon are exposed so that the surface of the first silicon base member and the surface of the second silicon base member are bonded together through their dangling bonds.