| 摘要 |
A method of forming a three dimensional porous thin film can include depositing a precursor solution on a substrate through a nozzle having a voltage applied thereto. The precursor solution is deposited through the nozzle as a spray. The precursor solution includes a first solution comprising My+ ions and a second solution having a lower boiling point than the first solution The method can further includes heating the deposited precursor solution under conditions sufficient to oxidize the M'' ions of the first solution and remove the second solution, thereby forming a three dimensional porous thin film represented by the formula MxOy, w herein M is a transition metal or a semiconductor, O is oxygen, x is in a range of 1 to 3, and y is in a range of 1 to 4. |
