| 摘要 |
Deflections from a desired trajectory of an ion beam outputted from an analyzer magnet are corrected with real-time monitoring of the ion beam deflection. Conductive structures are located close to the boundary of the beam exit, where each conductive structure is electrically insulated from other conductive structures and the analyzer magnet. Then, during implantation of ions into a wafer, continuous measuring of any current appearing on each conductive structure occurs, such that any collision between the conductive structure(s) and the ion beam is real-time monitored. By properly adjusting the shape/location/number of the conductive structure(s), and by properly adjusting the relative geometric relation among the conductive structure(s) and the desired trajectory, both the deflected angle and the deflected direction can be real-time monitored. Hence, the on-going implantation process and the implanter can be adjusted/maintained.
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