| 摘要 |
<p>PURPOSE: A thin film transistor display panel and a method for manufacturing the same are provided to directly etch conductive material for a pixel electrode without lifting or patterning the conductive material, thereby reducing the fault of the thin film transistor. CONSTITUTION: A data line(62) intersects with a gate line(22_1). A source electrode(65) and a drain electrode(66) is overlapped with a gate electrode(26_1). A planarization film(70_2) covers a data wiring. To expose at least one part of the drain electrode, the planarization film is formed at a height lower than at least one part of the drain electrode. A pixel electrode(82) is formed on the planarization film and exposes the drain electrode.</p> |
