发明名称 HEXAGONAL WURTZITE SINGLE CRYSTAL
摘要 A technique for growing high quality bulk hexagonal single crystals using a solvo-thermal method, and a technique for achieving the high quality and high growth rate at the same time. The crystal quality strongly depends on the growth planes, wherein a nonpolar or semipolar seed surface gives a higher crystal quality as compared to a c-plane seed surface. Also, the growth rate strongly depends on the growth planes, wherein a semipolar seed surface gives a higher growth rate. High crystal quality and high growth rate are achievable at the same time by choosing the suitable growth plane. High crystal quality is achievable when the nonpolar or semipolar seed surface RMS roughness is below 100 nm; on the other hand, the crystal grown from the Ga-face or N-face results in poor crystal quality, even though grown from an atomically smooth surface.
申请公布号 WO2009146384(A9) 申请公布日期 2010.08.12
申请号 WO2009US45527 申请日期 2009.05.28
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;SAITO, MAKOTO;DENBAARS, STEVEN, P.;SPECK, JAMES, S.;NAKAMURA, SHUJI 发明人 SAITO, MAKOTO;DENBAARS, STEVEN, P.;SPECK, JAMES, S.;NAKAMURA, SHUJI
分类号 C30B29/16;C30B7/00 主分类号 C30B29/16
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