| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stem for a semiconductor layer device which has high heat-dissipation performance and high versatility. Ž<P>SOLUTION: A metal base 11 at least has a first principal plane and a second principal plane. Insulating leads 12, 13 are provided so as to penetrate the first principal plane and the second principal plane. A heat sink 16 has an installation surface 16a for fixing a semiconductor laser device 19, and promotes emission of heat to be generated from the semiconductor laser device 19. Here, a part 11e of the outer peripheral surface except the first principal plane and the second principal plane in the metal base 11 and a part 16d of the outer surface in the heat sink 16 are joined. Thus, it is easy to suitably change the volume and the shape of the heat sink 16 without changing design of the metal base 11, and even a case that the high heat-dissipation performance is required is easily dealt with. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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