| 摘要 |
The method for producing crystallized silicon according to an edge-defined film-fed growth process by using molding parts for the production of solar cells, comprises forming a silicon melt (44) of the crystallized silicon between the molding parts in a drawing zone, supplying an inert gas and further fluid to the silicon melt and/or to the drawing zone, increasing the oxygen content in the crystallized silicon by the inert gas and the further fluid and mixing 50-250 ppm of water vapor as further fluid to the inert gas. The method for producing crystallized silicon according to an edge-defined film-fed growth process by using molding parts for the production of solar cells, comprises forming a silicon melt (44) of the crystallized silicon between the molding parts in a drawing zone, supplying an inert gas and further fluid to the silicon melt and/or to the drawing zone, increasing the oxygen content in the crystallized silicon by the inert gas and the further fluid and mixing 50-250 ppm of water vapor as further fluid to the inert gas. The inert gas with a content of oxygen, carbon monoxide and/or carbon dioxide is less than 20 ppm. The content of the water vapor in the inert gas is adjusted and/or regulated by a mass flow analyzer or a moisture-measuring device. The water vapor diffuses a well-known quantity of water in the inert gas over water- and/or water vapor-permeable membrane from a reservoir. Chlorine containing silicon granulates (20) are melted with 10 ppmw of a chlorine content for the formation of the silicon melt. The silicon granulates are used for recharge. The spherically formed granulates are melted with 90% of a ball diameter distribution between 0.8-3 mm. Independent claims are included for: (1) silicon; and (2) wafer cut out from the crystallized silicon. |
