METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING STRESS CREATING LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device including a stress generating layer is provided to prevent the deterioration of the electrical characteristic due to a contact-etching deviation by forming a barrier metal film in the recessed source-drain region of an n-type metal oxide semiconductor transistor. CONSTITUTION: A first gate(121) and a second gate(125) are formed on the first region(101) and the second region(105) of a semiconductor substrate(100). A first conductive type of first dopant region(131) is formed on both sides of the first gate in the first region. A second conductive type of second dopant region(135) is formed on both sides of the second gate in the second region. A first spacer(141) and a second spacer(145) are formed on both sidewalls of the first and the second gates. A first semiconductor layer and a second semiconductor layer are formed to contact with the first and the second dopant regions. An insulating film(180) is formed on the semiconductor substrate.