Power semiconductor device and manufacturing method therefor

摘要

A power semiconductor device includes a semiconductor element (20), a plastic housing (10), which covers the semiconductor element (20) and has a plastic housing concave (12) that is formed lower than the other part of the outer wall of the plastic housing (10), and a terminal (15), which is electrically connected to the semiconductor element (20) within the plastic housing (10) and extended from the plastic housing concave (12) to the outside of the plastic housing (10). The position of the terminal (15) within the plastic housing concave (12) gives positional displacement information about the terminal (15).