NON VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and an operating method thereof are provided to narrow a threshold voltage of a memory cell by changing the size of a program step voltage according to the number of bits which are passed for a program with an ISPP(Increment Step Program Pulse) method. CONSTITUTION: A memory cell array(210) comprises a plurality of memory blocks. The memory blocks are comprised of a plurality of memory blocks connected to a bit line and a word line. A data I/O unit(220) comprises an IO terminal and a Y decoder for inputting and outputting data and page buffer circuits connected to the bit line. An X detector(230) selectively connects the word line of the memory cell array to a global word line which provides the voltage according to an input address. A voltage supply unit(240) generates an operation voltage supplied to the global word line. A controller(250) controls the data input and output unit, the X decoder, and the voltage supply unit.