| 摘要 |
PURPOSE: A read operation method of a memory device is provided to increase the read operation speed by improving the read operation performance. CONSTITUTION: A memory device selects two or more memory cells for a read operation(S10). The memory device executes a first read operation including a discharge step, a precharge step, a developing step, and a sensing step(S20). The memory device performs a second read operation including the developing step and the sensing step(S30). The memory device determines the state of the first memory cell from the result of the second read operation(S40). The memory device executes a third read operation including the developing and sensing steps(S50). The state of the second memory cell is determined by combining the results of the first to third read operations(S60).
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