发明名称 |
Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protection |
摘要 |
An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions in which and on which the MOS device and the bipolar device are formed and electrically inactive regions for isolating the electrically active regions from each other. The MOS device comprises a gate structure and a body contacting structure, wherein the body contacting structure is formed of a base layer deposited in a selected region over an electrically active region of the semiconductor layer, and the body contacting structure is electrically connected with the gate structure. The base layer forming the body contacting structure also forms the base of the bipolar device. The present invention further relates to a method for fabricating such an integrated circuit.
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申请公布号 |
US7772057(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20060470760 |
申请日期 |
2006.09.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EL-KAREH BADIH;BALSTER SCOTT GERARD;YASUDA HIROSHI;SCHIEKOFER MANFRED |
分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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