发明名称 |
Laser irradiation apparatus, laser irradiation method, and manufacturing method for a semiconductor device |
摘要 |
The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.
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申请公布号 |
US7772519(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20040852259 |
申请日期 |
2004.05.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
TANAKA KOICHIRO;MORIWAKA TOMOAKI |
分类号 |
B23K26/00;B23K26/06;B23K26/067;B23K26/073;B23K101/40;G02B5/09;G02B27/09;G09F9/00;H01L21/20;H01L21/268;H01L21/336;H01L29/786 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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