| 摘要 |
A high performance thin film transistor includes a flexible substrate, a layer of metal oxide semiconductor material deposited on the flexible substrate, and a layer of self-assembled organic gate dielectric material deposited on the metal oxide semiconductor material. The metal oxide semiconductor material has high carrier mobility and is transparent. An interface is formed between the layer of metal oxide semiconductor material and the layer of organic gate dielectric material that is substantially free of reactions and Fermi level pinning. The polymer materials are not polar and do not give rise to gap state formation and interface scattering.
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