发明名称 Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
摘要 Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
申请公布号 US7773166(B2) 申请公布日期 2010.08.10
申请号 US20060638384 申请日期 2006.12.14
申请人 LG DISPLAY CO., LTD. 发明人 CHOI NACK BONG;KIM MIN JOO
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
主权项
地址
您可能感兴趣的专利