发明名称 |
Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen |
摘要 |
After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
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申请公布号 |
US7772678(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20080333577 |
申请日期 |
2008.12.12 |
申请人 |
ROHM CO., LTD.;HORIBA, LTD.;RENESAS TECHNOLOGY CORP. |
发明人 |
IWAMOTO KUNIHIKO;TOMINAGA KOJI;NABATAME TOSHIHIDE;NISHIMURA TOMOAKI |
分类号 |
H01L21/318;H01L23/58;H01L21/28;H01L21/336;H01L21/469;H01L29/51;H01L29/76;H01L29/78;H01L31/062;H01L31/119 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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