| 摘要 |
An oxide film forming equipment is provided with a reactor 10 in which a heater unit 14 holding a substrate 100 is stored, a piping 11 provided with a material gas introducing valve V1 for introducing a material gas containing organic silicon or organic metal into the reactor, a piping 12 provided with an ozone containing gas introducing valve V2 for introducing an ozone containing gas into the reactor 10, and a piping 13 provided with an exhaustion valve 13 for exhausting a gas in the reactor 10. When the material gas introducing valve V1, the ozone containing gas introducing valve V2, and the exhaustion valve V3 perform open-and-closure operations to alternately supply the material gas and the ozone containing gas into the reactor 10, the ozone containing gas introducing valve V2 operates to fall an ozone concentration of the ozone containing gas in a range from 0.1 vol % to 100 vol % and the heater unit adjusts a temperature of the substrate from a room temperature to 400° C.
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