发明名称 |
Methods of forming a semiconductor device |
摘要 |
A method of forming a semiconductor device is provided. A plurality of first guide patterns are formed on a substrate. A mask layer is conformally formed on the substrate. Second guide patterns are formed in empty regions on respective sides of the first guide patterns. The mask layer is planarized and the first and second guide patterns are removed. The mask layer is etched by an anisotropic etching process.
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申请公布号 |
US7772069(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20080074992 |
申请日期 |
2008.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-YONG;KWON SUNG-HYUN;SIM JAE-HWANG;KIM KEON-SOO;PARK JAE-KWAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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