| 摘要 |
The invention relates to an electron impact gas ion with high brightness and low energy spread. This high brightness is achieved by injecting electrons in a small ionization volume (from less than 1 μm to several tens of micrometers in size) from one side and extracting ions from the other. The electrons injected are produced by a high brightness electron source, such as a field emitter or a Schottky emitter. In one embodiment of the invention the required high electron density in the ionization volume is realized by placing a field emitter close to the ionization volume (e.g. 30 μm), without optics between source and ionization volume. In another embodiment of the invention the source is imaged onto a MEMS structure. Two small diaphragms of e.g. 50 nm are spaced e.g. 1 μm apart. The electrons enter through one of these diaphragms, while the ions leave the ionization volume through the other one. The two diaphragms are manufactured by e.g. drilling with an ion beam, resulting in two small and well aligned diaphragms.
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