发明名称 |
Plating apparatus, plating method and manufacturing method for semiconductor device |
摘要 |
A semiconductor device with plating film layers for semiconductor device leads is described. A first plating film layer that includes Sn as a main material is formed on a semiconductor device lead in which Cu or Fe—Ni is a main material. The outermost surface of the lead includes a plating film layer in which Sn—Bi is the main material. The plating film layer is formed from a plating liquid in which Bi is introduced from a lead hold means. The Bi content relative to Sn in the first plating film layer is approximately 0 wt. % to 1 wt. %.
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申请公布号 |
US7772043(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20070692695 |
申请日期 |
2007.03.28 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KAMEYAMA KOUJIRO |
分类号 |
H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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