| 摘要 |
Utility model belongs to the way of porous structure creation on the monocrystals surface of phosphide India, namely this is the way of electrochemical etching, as a result - the porous layer appears, which consists of macropores basically.The reception of the macroporous layer on the monocrystals surface of n-type phosphide doped to the concentration of n=2.3x10cмcarriers with orientation (111) was spent to some stages:1) degreasing of samples in hot(75-) solution of amiak;2) processing in the hot concentrated nitric acid (extraction of ions of metals);3) washing of samples in toluene, ethyl spirit, distilled water;4) electrochemical etching of samples in HF:CHOH:HO (1:2:1) solution for getting porous layer of phosphide India;5) cleaning examples in distilled water and drying using centrifuges jet of dry air.Porous indium phosphide is a promising material for developing super-fast integrated circuits, as well as a combination of optoelectronic devices in which information is processed not only electronically but also in optical form. Energy options porous InP crystals are very close to the parameters of monocrystalline silicon, so its easy to make based integrated optoelectronic devices compatible with silicon, in particular, resistive optopary. |
