发明名称 |
Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same |
摘要 |
A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.
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申请公布号 |
US7772661(B2) |
申请公布日期 |
2010.08.10 |
申请号 |
US20080178144 |
申请日期 |
2008.07.23 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
KILIAN WAYNE |
分类号 |
H01L49/02;H01L27/22;H01L43/04;H01L43/06 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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