| 摘要 |
A method for growth of monocrystals of silicon carbide of almanite comprises the growth of monocrystals of silicon carbide from silicon and carbon. High-grade pure silicon and carbon are used. Silicon is used as smelt and carbon is used as graphite from which all details of synthesizer, cover of synthesizer, crystallizer and crucible with silicon smelt are produced heated to temperature of synthesis of silicon carbide. Inside of synthesizer are installed cassettes for formation of nuclea, on cassettes pedestal us installed and nuclea are installed on pedestal. The pedestal and nuclea are rotated inside of synthesizer. Additional graphite plates on cover of synthesizer under apertures serve as valves. |
