| 摘要 |
PURPOSE: A stacked type loadless random access memory device is provided to reduce the cell size by laminating a pair of transmission transistors in the upper part of a pair of driving transistors. CONSTITUTION: A SRAM(static random access memory device) comprises a first, a second transistors, a third, and a fourth transistor. The first and the second transistors are arranged in the first and the second active regions of a semiconductor substrate(100). The third and the fourth transistor are arranged in the first and the second semiconductor layers on the upper part of the first and the second transistor. The first drain region of the first transistor, the third drain region(185a) of the third transistor, and the second gate of the second transistor are electrically contacted through the first contact node. The second drain region of the second transistor, the fourth drain region of the fourth transistor, and the first gate of the first transistor are electrically contacted through the second contact node.
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