METHOD OF READING DATA IN FLASH MEMORY DEVICE

摘要

PURPOSE: A method of reading data in a flash memory device is provided to improve junction overlap by increasing a pass voltage supplied to non-selected word line in a reading operation. CONSTITUTION: A bit line is pre-charged. A read voltage is applied to selected first word lines of word lines. A first pass voltage is applied to the second word line adjacent to the first word line. A first pass voltage is supplied to a second word line adjacent to the first word line. The second pass voltage lower than the first pass voltage is applied to the word lines. The voltage variation of the bit line is detected. The first pass voltage is applied to the second word line adjacent to the first word line.