| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to increase the capacity of a capacitor by forming a dielectric layer for a capacitor on a peripheral circuit region around a blocking insulation layer. CONSTITUTION: A tunnel insulation layer and a charge storage layer(104) are formed on a cell region of a semiconductor substrate which is defined as the cell region and a peripheral circuit region. A gate insulation layer and a first conductive layer(114) are formed on the semiconductor substrate of the peripheral circuit region. A blocking insulation layer(118) is formed on the charge storage layer of the cell region and the first conductive layer of the peripheral circuit region. A capacitor on which the first conductive layer, the blocking insulation layer, and the second conductive layer is formed by forming the second conductive layer on the whole structure including the blocking insulation layer.
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