DIAGNOSTIC SYSTEM AND METHOD FOR SINGLE CRYSTAL SILICON INGOT GROWTH FURNACE FOR SOLAR CELL

摘要

PURPOSE: An abnormality diagnostic system and a method thereof are provided to improve the quality of a silicon ingot by detecting the complex abnormal symptoms of a system through a principal component analysis or a neutral network. CONSTITUTION: A process variation is detected by analyzing variables including the temperature inside an ingot growing furnace and the weather components. An abnormal symptom is detected with the detected process variation. An abnormality diagnostic system uses a method which separately analyzes process parameters. The abnormality diagnostic system uses a statistics processing control method for sensing the complex change of parameters.