| 摘要 |
PURPOSE: An erase method of a non-volatile memory device is provided to control the reference voltage of an erase verification by controlling a voltage supplied to a gate between a bit line and a sensing node. CONSTITUTION: An erase operation is performed in memory cells. An erase verification operation is performed. The threshold voltage of memory cells is compared with an erase reference. An additional erase operation is performed by increasing the erase voltage to higher voltage than the threshold voltage of the memory cells. The erase verification operation is performed according to the erase reference voltage of a first level. The erase operation is completed when the erase verification operation is passed.
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