SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND LEAKAGE-CURRENT REDUCTION METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a withstanding-voltage characteristic and reducing the leakage current, and to ptovide a manufacturing method therefor, and a method for reducing a leakage current thereof. SOLUTION: An HFET (high field-effect transistor) 100 is equipped with a sapphire substrate 101 that serves as a support substrate; a buffer layer 102 on the sapphire substrate 101; a carrier-moving layer 103 on the buffer layer 102; a carrier-supplying layer 104 on the carrier-moving layer 103; a source 106s and a drain 106d remotely formed on the carrier-supplying layer 104; a gate 107 formed on the carrier-supplying layer 104 in between the source 106s and the drain 106d; and an insulating film 105 covering over the carrier-supplying layer 104. The carrier-supplying layer 104 has a carbon concentration that exceeds 2×1017cm-3. COPYRIGHT: (C)2010,JPO&INPIT