PATTERN CORRECTION METHOD, MASK FOR EXPOSURE, METHOD FOR MANUFACTURING THE MASK FOR EXPOSURE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To optimize the characteristics in each transistor even if a semiconductor circuit pattern uses a plurality of transistors as constituent elements when correcting the semiconductor circuit pattern.

SOLUTION: The pattern correction method comprises: a correction step of correcting the semiconductor circuit pattern having a plurality of transistors as the constituent elements (S107); an order-of-priority recognition step of recognizing the order of priority set with respect to a plurality of transistors prior to the pattern correction in the correction step (S102); and a condition adjustment step of adjusting correction conditions for correcting the pattern by using the transistor having high order of priority recognized in the order of priority recognition step as reference (S106b) to correct the semiconductor circuit pattern.

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