| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition which can form a pattern having excellent MEEF (Mask Error Enhancement Factor) and profile. <P>SOLUTION: The photoresist composition comprises a resin comprising a structural unit having an acid-labile group in a side chain and an acid generator, wherein the resin contains 40-90 mol% of the structural unit having an acid-labile group in a side chain based on all the structural units constituting the resin, and the structural unit having an acid-labile group in a side chain contains at least a structural unit represented by formula (I). <P>COPYRIGHT: (C)2010,JPO&INPIT |
