发明名称 DELAY CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce a consumption current during operation in a delay circuit for output of an input signal with a delay. <P>SOLUTION: A capacitance element 107 is connected to a terminal 202 of the delay circuit 100 via a P-channel MOS transistor 105. In a NAND circuit 104, an input terminal is connected to an input terminal 201 of the delay circuit 100 and an inverter 103, and an output terminal is connected to a gate terminal of the P-channel MOS transistor 105. In the inverter 103, an input terminal is connected to the output terminal of the delay circuit 100. In the P-channel MOS transistor 105, a terminal 202 and the capacitance element 107 are made to be electrically connectionless in response to the fact that an output signal of the delay circuit 100 changes to a H level from an L level. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010171946(A) 申请公布日期 2010.08.05
申请号 JP20090276427 申请日期 2009.12.04
申请人 ELPIDA MEMORY INC 发明人 HOSOE YOSHIKI;SUZUKI TAKAMASA
分类号 H03H11/26;H03K5/13 主分类号 H03H11/26
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