发明名称 |
Non-volatile memory device having vertical structure and method of operating the same |
摘要 |
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
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申请公布号 |
US2010195395(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100658072 |
申请日期 |
2010.02.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAE-HUN;KIM HAN-SOO;CHO WON-SEOK;JANG JAE-HOON;SHIM SUN-IL |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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