Semiconductor memory device having shift registers

摘要

A semiconductor memory device includes n stages of memory cell units, sense amplifier units, and shift registers. N units of the shift registers are connected to one another on the left end sides. The signal processing units and the reversed signal processing units are disposed adjacent to one another in each of the n units of the shift registers. The signal processing units located on the odd-numbered positions counted from the input end side are connected to one another. The reversed signal processing units located on the even-numbered positions counted from the input end side are connected to one another. The signal processing units located on the end opposite to the input end side are connected to the reversed signal processing units located on the end opposite to the input end side. Each of the signal processing units includes the logic circuit unit and the flip-flop while each of the reversed signal processing units includes the reversed logic circuit unit and the reversed flip-flop.