发明名称 |
FLASH MEMORY DEVICE AND METHODS PROGRAMMING/READING FLASH MEMORY DEVICE |
摘要 |
Multilevel flash memory and methods of programming/reading flash memory are disclosed. The multilevel flash memory device comprises a status detector configured to detect whether or not a target memory cell is programmed to an erase state, and a control logic unit controlling a program voltage applied to a neighboring memory cell adjacent to the target memory cell and to be programmed to one of a plurality of standard program states, such that the neighboring memory cell is programmed to a corresponding one of a plurality of correction program states different from the one of the plurality of standard program states.
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申请公布号 |
US2010195389(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100697542 |
申请日期 |
2010.02.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JAEHONG;SON HONG-RAK;KONG JUN-JIN;SHIN YOO-CHEOL |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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