发明名称 |
LAMINATED FILM MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE |
摘要 |
A production method for a semiconductor film according to the present invention includes: step (a) of forming a first film 103 supported by a substrate 101; step (b) of forming a second film 102 being supported by the substrate and having a lower thermal conductivity than that of the first film 103; step (c) of depositing a semiconductor film 104 in an amorphous state above the first film 103 and the second film 102; and step (d) of irradiating portions of the semiconductor film 104 that are located above the first film 103 and the second film 102 with an energy beam of the same intensity, thereby crystallize the portion of the semiconductor film 104 that is located above the second film 102 and leaving the portion of the semiconductor film 104 that is located above the first film 103 in the amorphous state.
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申请公布号 |
US2010193792(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20080669762 |
申请日期 |
2008.07.14 |
申请人 |
MIYAJIMA TOSHIAKI |
发明人 |
MIYAJIMA TOSHIAKI |
分类号 |
H01L33/16;H01L21/20;H01L29/786 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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