| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve productivity in manufacturing a pixel with a thin-film transistor using an oxide semiconductor. <P>SOLUTION: A display device includes a first wiring functioning as a gate electrode formed on a substrate, a gate insulating film formed on the first wiring, a second wiring and an electrode layer provided on the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer on the gate insulating film. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer on the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer may be exposed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
