| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film deposition apparatus and a film deposition method where, during the repetition of a film deposition stage and a cleaning stage, the increase in the temperature of a vacuum tank is suppressed, and also, the inside of the tank can be efficiently and uniformly cleaned. SOLUTION: The film deposition method includes: a film deposition stage where a film is deposited on the object for film deposition while generating plasma in a vacuum tank; and a cleaning stage where, in every film deposition stage for one time or a plurality of times, a cleaning gas is introduced into the vacuum tank, to perform cleaning. In the cleaning stage, the cleaning gas contains ions or radicals when introduced into the vacuum tank after being activated before being introduced into the vacuum tank, and also, high frequency voltage is applied to a cathode electrode in the vacuum tank. COPYRIGHT: (C)2010,JPO&INPIT |
