| 摘要 |
A base is formed of a material, such as SiC, having mechanical characteristics higher than those of silicon for forming a semiconductor layer, and the base and the semiconductor layer are bonded through an insulating layer. After bonding, an SOI substrate is formed by mechanically separating the semiconductor layer from the base, and the separated semiconductor layer is reused for forming the subsequent SOI substrate. Thus, a large SOI substrate having a diameter of 400 mm or more, which has been difficult to obtain by conventional methods, can be obtained.
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