| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cross-point type semiconductor memory apparatus having a structure and a configuration in which the size of one memory cell is lower than 4F<SP>2</SP>. Ž<P>SOLUTION: A cross-point type semiconductor memory apparatus is configured by: a plurality of first wirings 41A and 41B extended in a first direction; a plurality of second wirings 42 located on a different position from the first wirings in a vertical direction, and extended in a second direction different from the first direction; and a memory 43, provided in a region where the first wirings and the second wirings are overlapped. An odd-numbered first wiring 41A and an even-numbered first wiring 41B are arranged on interlayer insulating layers 21 and 22, which are different from each other in the vertical direction, respectively. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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